Experimental Validation of RC Snubber Circuit for GaN-Based Battery Formation Device With Switching Noise Coupling Problem

This paper proposes a method for implementing the design of a snubber circuit to address the switching noise coupling issue in Gallium Nitride (GaN)-based battery formation devices. The proposed snubber design serves as process to avoid voltage spike resulting from the parasitic inductance within the PCB loop, preventing its interference with the interleave switch and mitigating the risk of overvoltage in GaN switches. Utilizing the proposed snubber circuit design, a comparative experiment is conducted to demonstrate the improvements before and after snubber circuit design. The validation result shows enhancements for
$44.6\%$
switching noise, overvoltage, and ringing reduction.