Dual Inductive Probe Concept for Impedance Measurements from 9 kHz to 120 MHz in Presence of High DC-Bias Current - Part One

The introduction of fast switching silicon-carbide-or gallium-nitrite-semiconductors allow to build up more efficient power electronic devices, but also lead to shifts in the frequency spectrum regarding to disturbances. Therefore, the knowledge of high frequency properties of such devices is of utmost importance. This paper presents design rules, construction details of a two-in- one inductive probe solution for contact-less, phase-correct impedance measurements and a new approach for calibration standards. The proposed probe allows measurements in the frequency range of 9 kHz to 120 MHz in the presence of DC-biascurrents of up to 200 A. In a second contribution with the title ”Dual Inductive Probe Concept for Impedance Measurements from 9 kHz to 120 MHz in Presence of High DC-Bias Current - Part Two” the performance of the described probe is discussed.