Double screened test setup for discontinuous radiated emissions from GaN HEMT devices in the frequency range of 30 MHz – 40 GHz

This article shows method of measure unwanted radio frequency emission coming from new type transistors constructed on Gallium Nitride base (GaN) in frequency range of 30 MHz - 40 GHz. A dedicated Faraday’s cage was designed to extract emissions coming through housing of the transistor only. Secondary screening was achieved by use of an anechoic chamber and fast wide-band spectrum measurement was taken by real-time EMI receiver.