Multiple Transient Voltage Suppressor Diodes-Based Protection Circuits with Decreasing Loading Effect Under High-Power Microwave Pulses

This study demonstrates multiple transient voltage suppressor (TVS) diodes-based protection circuits under high-power microwave (HPM) pulses to protect sensitive semiconductor and microwave devices from interference or even damaged by intentionally electromagnetic interference (IEMI). Firstly, the nonlinear large signal model of two adopted types of TVS diodes are studied. Secondly, a transmission line (TL) is applied to compensate degrade of RF performance resulted from TVS diode capacitance. Therefore, protection circuits based on multiple TVS diodes are proposed and measured under HPM pulses with their overshoot protection ratio (PR) recorded. The highest overshoot protection ratio (PR) of-these circuits is approximately 17-20dB when the input HPM pulse power ranges from 50 to 63 dBm. Measured results are correlated with simulated results.