Two-Dimensional Numerical Simulation Study on the Synergistic Effects of Transient Ionizing Radiation and Electromagnetic Pulse on Bipolar Junction Transistor

Utilizing semiconductor device simulation tools, a study was conducted on the transient current response of bipolar junction transistors under the synergistic effects of transient ionizing radiation and electromagnetic pulses. The results indicate that, under positive forward bias conditions, the synergistic effect of positive polarity pulse injected into the base and transient ionizing radiation exceeds the linear superposition of their individual effects. However, with an increase in the amplitude of the electromagnetic pulses, the synergistic effect gradually converges towards the outcome observed when electromagnetic pulses act in isolation. Furthermore, the synergistic effect of positive polarity pulse injected into the collector and transient ionizing radiation surpasses the linear superposition of their individual effects. Notably, as the amplitude of the electromagnetic pulses increases, the synergistic effect deviates increasingly from the linear superposition of their individual effects.