High Temperature Silicon Carbide Power Module with Integrated Current Sensors for Paralleled Chips

The integration of current sensors in silicon carbide devices can make the power module have the ability of realtime current monitoring, which can not only replace the current measurement device with large volume and weight outside the power module, but also has a broad application prospect in the field of short-circuit protection and active equalization of the results of the monitoring of chip current inside the power module. However, the existing research can not meet the needs of high-temperature SiC module within the current sensor integration. This paper proposes a high-temperature SiC device with integrated low-temperature co-fired ceramic (LTCC) small-volume high-temperature current sensors, the integrated sensor can be used to measure the transient current distribution of the parallel SiC chips. What's more, the use of high-temperature encapsulation process to achieve the high-temperature packaging at 225°C. Experimentally demonstrated that the sensor integrated in the proposed SiC device has measurement accuracy, and can accurately measure the chips current in parallel. The drive voltage of parallel chips can be changed by discrete driver to regulate current distribution characteristics of chips.