Numerical Investigation on the Czochralski Crystal Growth and Oxygen Concentration with CUSP Magnetic Field

High quality single crystal silicon can help improve product performance and increase enterprise's profitability. Superconducting magnetic fields have been imported to the semiconductor industry as a way to decrease the impurity content during single crystal silicon growth process. In this article, a 2D numerical simulation on the Czochralski crystal growth method furnace heat transfer and melt flow is conducted, along with the effect of an external CUSP magnetic field. The results show that the natural convection melt flow under the magnetic field has been suppressed. And the oxygen concentration is reduced, hence the crystal quality is ameliorated.