The Packaging Design of SiC Power Modules Based on Silver Sintering Technology

This article introduces the packaging design of a SiC power module with a double-sided pressure-assisted silver sintering process. Initially, the structure of the power module is optimized and verified through electro-thermal-mechanical multiphysics field simulation experiments. Subsequently, the assembly processes of the module are further described. The module is characterized by the use of pressure-assisted silver sintering process twice to sinter the chip and the DTS copper sheet of the module, thereby further improving the yield of copper wire bonding. The first silver sintering process attaches the SiC chip to the AMB substrate, and the second silver sintering process attaches the DTS copper sheet to the source surface of the SiC chip, thus better accommodating the interconnection process of copper wire bonding. The push-pull force test is conducted for validation. The results show that the overall pull force of the copper wire is normally distributed, focusing on 1.6-2.2kg, and the breakage occurs either at the root of the solder joint or in the middle of the bonding wire, with the bonding parameters meeting the current process requirements and achieving ideal effects.