Analysis of the Influence of Bond Wire Aging on Junction Temperature Estimation in IGBT Modules

The Insulated Gate Bipolar Transistor (IGBT) is a core component in power electronic systems. The inevitable trend towards higher power density and reliability in future power electronic systems places greater demands on the reliability research of IGBT devices. Accurate junction temperature measurement is fundamental to the health management and reliability assessment of IGBT devices, playing a crucial role in the evaluation of their reliability and health management. However, junction temperature monitoring is susceptible to the influence of module aging, leading to inaccurate temperature measurements. This paper focuses on the junction temperature measurement of IGBT modules and builds on the existing method based on temperature-sensitive electrical parameters (V
ee_on
). By conducting an in-depth analysis of IGBT module packaging aging and establishing an equivalent circuit for the parasitic parameters of the IGBT module packaging, this study simulates the aging of IGBT bond wires and investigates its impact on the junction temperature monitoring method based on on-state voltage drop. This provides a research foundation for subsequent accurate junction temperature monitoring that decouples the effects of aging.