A Semi-Physical Model of SiC MOSFETs for Improved Static Characteristic

Silicon Carbide (SiC) MOSFETs have been widely applied in power converters due to its superior properties. Accurate simulation of SiC MOSFET is essential to its application. This paper presents a semi-physical model of SiC MOSFET, which has an excellent performance at static characteristic. The proposed model is based on the description of physical phenomena include the influence of SiC/SiO2 traps and the saturate process of channel voltage. The model is validated on a 1.2kV-19A SiC MOSFET, and application of the model at different temperature is discussed.