4H-SiC Tetra-Lateral Position Sensitive Detector for Ultraviolet Measurements

In this work, a tetra-lateral 4H-SiC ultraviolet (UV) lateral-effect position-sensitive detector (PSD) formed by selective-area ion implantation has been manufactured and characterized. The PSD with an
$8\times 8$
mm photosensitive area presents a low dark current of 6 pA, a fast rise time of
$12.6~\mu $
s, a high detectivity of
$2.0\times 10^{{13}}$
cm
$\cdot $
Hz
$^{{0.5}} \cdot $
W
$^{-{1}}$
, and a high responsivity of 0.13 A/W at 275 nm at 0 V. By applying transimpedance amplifier processing circuits, the PSD presents good 2-D position capability for UV light spots with a nonlinearity of 9.8% within more than 75% of the photosensitive area. The PSD also shows obvious independence on the reverse bias voltage, the spot size, and the incident light power. The interaction of the electrodes of PSD is considered to be the reason for nonlinearity by comparing the output signals. Moreover, the applications of precise angle measurement have been realized using this device as a sensor.