Design of the Dual-Channel Dickson Rectifier with Native NMOS for RF Energy Harvesting Sensors

We propose a dual-channel Dickson rectifier including two independent 1-stage rectifiers for the radio frequency (RF) energy harvesting sensors. It presents the characteristic model of the native NMOS and the leakage model of the Dickson rectifier. The power consumption model of the switch and charging time are derived. Further, 1-stage rectifiers with NMOS
$\mathrm{W}/\mathrm{L}=2\mu \mathrm{m}/1\mu \mathrm{m}$
and
$\mathrm{W}/\mathrm{L}=16\mu \mathrm{m}/1\mu \mathrm{m}$
are designed to work in the rectifier input power
$P_{rec_{-}\dot{x}n}$
smaller and larger than -18 dBm, respectively. The maximum power conversion efficiency (PCE) are 63.84% and 63.92% in the two ranges. The size of the PMOS switch for charging the InF storage capacitor
$C_{stor\mathrm{e}}$
is optimized as IOO/_LlnlI80nm to minimize the power loss.