First Demonstration of All-SiC Half-Bridge Gate Driver with High-Side Floating Substrate Region

This paper proposes a 200V all-SiC integration process platform integrating low-voltage (LV) and high-voltage (HV) devices, such as LV NMOS, LV PMOS, resistor, capacitor, HV LDMOS, and HV Diode. Based on these devices, a 200V half-bridge driver composed of a low-side driver and a high-side driver was designed and fabricated. Then, the half-bridge driver was packaged and measured. The measurement results shows that the proposed half-bridge driver can operate normally at 25°C and 200°C.