A Fully Realised ‘Dielectric Field Relief’ TrenchMOS Technology

Nexperia has developed a low-cost novel device concept, with high avalanche ruggedness, low output charge (QOSS) and reduced on-state resistance (Rds(on)) for any given Vds rating. This exciting technology uses the principle of ‘Dielectric RESURF’ to achieve the required breakdown voltage by utilizing proprietary process techniques to grow an extended Thick Barrier Oxide (eTBO) throughout the active gate trench network, removing the requirement for a super junction or shield field plate to achieve the RESURF.