Comprehensive Study on Trapping-Induced Dynamics in β-Ga2O3Schottky Barrier Diodes Under Continuous Switching Stress

This paper presents a comprehensive study of the static and dynamic characteristics of Schottky barrier diodes based on a
$\beta$
-phased gallium oxide
$(\text{Ga}_{2}\mathrm{O}_{3})$
. The dynamic performances of
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
SBDs under continuous switching stress show a significant Schottky barrier height instability. The barrier height increases along with the increase of negative stress voltage
$(V_{\text{stress}})$
. An optimized current transient methodology for characterizing device trap information is proposed. The set of dominant trap active energy is characterized as
$E_{\mathrm{c}}-0.76\ \text{eV}, -0.62$
eV, and −0.47 eV. These findings provide evidence of possible instability of
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
based devices in power switch applications and offer a path for reducing instability issues.