200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability

E-mode power HEMTs with epitaxially grown p-AlN/p-GaN gate are demonstrated for the first time to enhance the gate reliability, including the positive bias temperature instability (PBTI), time-dependent gate breakdown, and the high-temperature gate bias (HTGB). Furthermore, the electroluminescence (EL) emission is conducted to evaluate the electrons-holes recombination through the Magnesium acceptor and deep-level donor in the p-AlN layer, and the TCAD simulations indicate that the hole barrier tunneling can be reduced from the Schottky metal/p-AlN/p-GaN interfaces by using epitaxially grown p-AlN/p-GaN gate stack.