A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout

This work proposes a 6.5 kV-rated 4H-SiC MOSFET, which utilizes one conduction channel within its cell structure. This approach allows for reduced input capacitance
$(\mathbf{C}_{\text{iss}})$
due to the removal of a channel. The new one-channel MOSFETs were fabricated on 4-inch SiC wafers along with conventional MOSFET structures. The novel one-channel architecture achieved a 34% reduction in
$\mathbf{C}_{\text{iss}}$
. Additionally, the proposed layout showed no adverse influence on the device's forward conduction or blocking characteristics. This novel MOSFET demonstrates the intriguing potential for improved dynamic performance and unique device architectures for high-voltage SiC MOSFETs.