Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons

Cosmic ray testing is usually performed with the gate electrode shortened to the emitter ground, producing zero electric field across the gate dielectric oxide. In real applications, the gate is usually charged to +/-15 V with respect to the emitter, resulting in a field strength exceeding 100 kV/mm. This work aims to test the effect of a gate voltage applied on the failure in time (FIT) rate of Trench Si-IGBTs irradiated with protons and neutrons, providing more realistic test conditions close to the application. Further, HTGB tests are performed on the surviving devices to provide novel insights into the impact of cosmic ray particles on the gate oxide reliability.