Experimental Comparative Demonstrations and Analysis of 3.3kV 4H-SiC Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching

In this work, we evaluate the switching performance of a hybrid bidirectional (BD) 3.3kV 4H-SiC Charge-Balanced (CB) power DMOSFET in common-drain (CD) and common-source (CS) configurations. Based on the experimental data, we develop an RC switching model and use it to compare the switching performance of the BD CB DMOSFET for the CD and CS configurations.