Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective hole Injection

The virtual-body p-GaN gate HEMT (VB-HEMT) has been demonstrated as an effective method to suppress buffer trapping induced dynamic R
ON
degradation. The buffer trapping is fully screened by virtual body which is formed with hole injection from p-GaN gate. Therefore, the Ohmic-type gate/p-GaN contact is necessary to ensure effective hole injection to form virtual body, whereas leading to limited gate swing. In this study, we demonstrated a metal/insulator/p-GaN gate VB-HEMT (MIP-VB-HEMT) which consists of a main transistor and a p-GaN potential stabilizer (PPS) to simultaneously achieving large gate swing and effective hole injection for the formation of virtual body. In the proposed device, the MIP-gate blocks additional gate voltage and thus the gate swing is enlarged to 20.4 V. In the ON-state, a constant gate current is applied by the PPS to ensure hole injection to form the virtual body and screen buffer trapping. Then, the screening effects on buffer trapping are verified by the positive back-gating measurements. As a result, the MIP-VB-HEMT exhibits both improved gate swing and superior dynamic RON performance.