Durable Edge Termination Design of SiC SBD Against Humidity

Humidity robustness of SiC devices has become a major concern. The degradation of SiC devices under high temperature and high humidity conditions is expected to be caused by excessive electric fields in the termination region. In this study, accelerated high voltage high humidity high temperature reverse bias tests are conducted on 3.3 kV SiC-SBDs with field limiting rings of different electric field designs. The results confirm that reducing the electric field on the SiC surface improves the durability of the SiC devices against humidity.