Study of a Packaging Technology for Ultra Compact Double-Side Cooled Power Module with Power Chip Size Package

In response to the demand for higher power density of inverters for EVs, we are developing package technology to take advantage of the excellent high-speed switching performance and high-power density of SiC-MOSFETs to the limit of their characteristics. In this study, we have focused on developing the following four key technologies to realize low height, downsizing, and high efficiency 1200 V/200 A 2-in-1 double-side cooled power module technology. A) SiC-MOSFET mounted power chip size package technology, B) cooling fin and case integrated insulation substrate technology, C) bump bonding technology to absorb height variation occurs in mounting areas on both sides of chips, and D) insulation technology inside double-side cooled power modules. These four key technologies have also made it possible to simplify the complex structure and assembly process of double-side cooled power modules. Furthermore, we evaluated the static, switching, and thermal resistance characteristics and confirmed that the developed double-side cooled power module performs as expected.