An Integrated Low-Power Enhanced Pull-Up GaN Driver Using SenseHEMT for Reliable and Fast Short-Circuit Protection

This article proposed an integrated GaN driver with a low-power enhanced pull-up (LPEP) technique to achieve the decoupling between the charging path and the leakage path of the inverter in the driver. Considering the poor short-circuit tolerance of GaN power HEMTs, a low-loss fast short-circuit detection (FSCD) technique using senseHEMT is proposed for reliable and fast short-circuit protection. Experimental results show that the leakage current of the single-stage inverter is 28μA and the rise time of the gate voltage
$V_{\mathrm{G}}$
of powerHEMT is 0.71ns. The measured minimum short-circuit response time is 37ns.