LDMOS of 34mΩ-cm2 On-Resistance with 700V Breakdown Voltage

We have designed and fabricated an Accumulation Lateral Diffused MOSFET (LDMOS) (AccuMOS®), which incorporates multiple electrodes over drift region and regulated by an integrated circuit (IC). A record low specific
$\mathrm{R}_{\text{dson}}$
of 34mΩ-cm
²
with breakdown voltage (V
B
) of 700V has been obtained. Devices were tested in switching power applications and performance was satisfactory. Current LDMOS structure is scalable and performance is expected to progress with smaller lithographic features. Analysis suggests a 3-dimensional fin-FET structure could potentially reduce
$\mathrm{R}_{\text{dson}}$
to below 6mΩ-cm
²
for
$\mathrm{V}_{\mathrm{B}}=700\mathrm{V}$
.