Monolithic Integration of SiC Lateral MOSFET With Lateral Schottky Diode for Power Converters

In this work, we first report the monolithic integration of SiC lateral MOSFET (L-MOS) with lateral Schottky barrier diode (L-SBD). The parts of L-MOS and L-SBD are interconnected at the cell-to-cell level, and form integrated chips used in some power converters with the expectation of higher efficiency and higher switching frequency. The structure design has been optimized to ensure the blocking and ON-state performance, and then fabricated. It is demonstrated experimentally that the L-MOS achieved breakdown voltage (BV) of 1030V with specific ON-resistance
$(R_{ON,sp})12.5\mathrm{m}\Omega\cdot \text{cm}^{2}$
, and the L-SBD achieved BV of 1440V with
$R_{ON,sp}$
of 5.34
$\mathrm{m}\Omega\cdot \text{cm}^{2}$
, which exhibits good performance compared to SiC counterpart devices. This work provides perspective for the SiC monolithically integrated applications.