Novel Methodology for Fast Model Parameter Extracting Using $Q_{\mathrm{g}}$ Waveforms to Accurately Capture Switching Characteristics of SiC MOSFET Under Various Load Conditions

This paper proposes a method for fast extracting model parameters, which can accurately capture the switching characteristics of SiC MOSFETs under various load conditions. The power limitation of the experimental instrument makes it difficult to obtain
$I-V$
data under high
$V_{\mathrm{d}\mathrm{s}}$
, so the proposed method extracts this data from
$Q_{\mathrm{g}}$
waveforms. In addition, the presented method abandons fitting
$C-V$
curves and instead fits the curves of charge change
$\Delta Q_{\mathrm{g}}$
on the gate with respect to
$V_{\text{ds}}$
and
$V_{\text{gs}}$
to extract the capacitance parameters of the model, thereby solving the issue where the “Miller ramp” cannot be captured in existing models. This paper writes the model into PSPICE and utilizes the proposed method to extract the model parameters. The experimental data confirms that the proposed method outperforms existing methods in characterizing switching waveforms of SiC MOSFETs.