3.3 kV-Class 4H-SiC Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness

In this paper, the 4H-SiC super-junction (SJ) Schottky barrier diode (SBD) with hexagonal cell has been fabricated by trench etching and epitaxial regrowth process. The fabricated device achieves a breakdown voltage (BV) of 3570V with specific on-resistance
$(\mathrm{R}_{\text{on},\text{sp}})$
of 4.5mΩ.cm
²
which breaks the one-dimensional performance limit of the SiC unipolar device. The impact of SJ's mesa width on static I-V and C-V characteristic has also been investigated. With a double pulse test, the fabricated device performs high speed switching over 50kV/μs. The repetitive surge current test is also carried out on the fabricated device to demonstrate its surge robustness.