Kilovolt, Low-Barrier Ga2O3 JBS diode with Ultra-Low Forward Voltage

Gallium oxide
$(\text{Ga}_{2}\mathrm{O}_{3})$
has attracted extensive attention for next-generation power devices. However, the reported
$\text{Ga}_{2}\mathrm{O}_{3}$
rectifiers typically exhibit high turn-on voltage (VON) and forward voltage drop
$(V_{\mathrm{F}})$
, leading to increased conduction losses. Conventional power SBDs are limited by a tradeoff between
$V$
F
and leakage current
$(I_{\mathrm{R}})$
, which may pose a critical challenge for ultra-wide bandgap (UWBG) SBDs due to the high junction electric field (and
$I_{\mathrm{R}}$
). This work demonstrates the first
$\text{Ga}_{2}\mathrm{O}_{3}$
JBS diode with a low-barrier Schottky contact. Deploying the TiN contact, an ultra-low VON of 0.52 V and V
F
of 1 V [at forward current
$(I_{\mathrm{F}})$
of 150 A/cm
²
], along with a high breakdown voltage (BV) over 1 kV, are demonstrated in
$\text{Ga}2\mathrm{O}_{3}$
JBS diodes. Such V
F
is lower than the usual V
F
of commercial 650V-rated SiC JBS diodes (1.3~1.8 V), indicating the promise of
$\text{Ga}_{2}\mathrm{O}_{3}$
JBS diode for power electronics applications. In addition to device innovation, this work also presents the first comparison of
$\text{Ga}_{2}\mathrm{O}_{3}$
JBS diodes formed along [100] and [010] orientations, which reveals the strong impact of the orientation anisotropy of
$\text{Ga}2\mathrm{O}_{3}$
on the JBS device performance.