A Novel MOS Controllable Stored-Carrier Diode (MOSD) for An Innovative Silicon Power Device (i-Si)

A novel MOS controllable stored-carrier diode (MOSD) is proposed, that can break through V
F
and
$\mathrm{E}_{\text{rr}}$
tradeoff for conventional pn-diode. The MOSD, which consists of a low-injection
$\mathrm{p}^{-}$
layer, injection-promoting
$\mathrm{p}^{+}$
layer, Electron Barrier layer,
$\mathrm{n}^{+}$
layer, and surrounding MOS gate, enables control of stored-carrier density using gate bias during diode conduction, and a high-breakdown voltage independent of gate bias during blocking. A 6.5 kV MOSD shows extremely lower V
F

$(-1.0\mathrm{V})$
and
$\mathrm{E}_{\text{rr}}+\mathrm{E}_{\text{on}}$
(−43%) than the ultra-soft & fast recovery pn-diode (U-SFD). An innovative silicon power device (i-Si) consisting of the proposed MOSD and dual side-gate high-conductivity IG:BT through time and space control of stored-carrier (TASC-HiGT), which are made entirely from silicon, demonstrated −40% inverter loss of pn-diode and IGBT, equivalent to SiC-DMOSFET.