Experiments of A Novel 600V SOI-LIGBT with Parallelly Discrete Cells for Amperage-Class Current Integration

In this paper, a novel 600 V silicon-on-insulator lateral insulated-gate bipolar transistor with parallelly discrete cells (P-cell LIGBT) for amperage-class current integration is reported, which has a large current capability and a wide safe operating area (SOA). The amperage-class current integration is achieved in the P-cell LIGBT through 8 parallelly discrete cells. By using a parallel structure, the novel P-cell LIGBT completely avoids the high electric field from the curvature effect at the cathode-center termination of the conventional structure. In addition, a series of stepped shield rings are introduced between the high-voltage interconnect (HVI) and the drift region to shield the strong field modulation of the HVI on the device and also can be used as a field plate structure to optimize the surface electric field. The fabricated P-cell LIGBT realized a high breakdown voltage V
B
of 651 V, and current capability up to 5 ampere level in the on state.