Demonstration of Split Double Gate $\text{CSTBT}^{\text{TM}}$ for Switching Loss Reduction

IGBTs have been improved by various innovations such as
$\text{CSTBT}^{\text{TM}}$
[1]. The device performance has been approaching the physical limit. Recently, the focus has shifted towards the multi-gate driving as a means to overcome the limitation of switching loss reduction r2-81.