Physics-based Compact Model for Multi-channel AlGaN/GaN Schottky Barrier Diodes

This paper showcases a simple yet comprehensive compact model for multichannel AlGaN/GaN Schottky-barrier diode (SBD) with a p-GaN RESURF layer. Model formulation, including equivalent circuit, key equations, and parameter assign-ment, are explained in details, together with parameter extraction flow. The model correctly reflects the device physics in forward-bias, reverse-bias and breakdown conditions, capturing critical behaviors associated with multi-channel turn-on and RESURF effects from the p-GaN layer. Good accuracy, scalability, and computation robustness are validated via: IV, CV, breakdown simulations. The physics-based model can also be used as a tool for technology optimization and scaling projections. This is illustrated via simulations on (1) the impact of barrier/channel thickness on device capacitance and (2) the effect of RESURF-length
$(L_{RE\mathrm{S}URF})$
on the Baliga Figure-of-Merit (FoM) and area-scaling FoM. With minimum adjustment, the proposed model also serves as a first step towards compact modeling of multi-channel AlGaN/GaN transistor.