Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology

The Floating Island (FI) technology is a promising approach to break the 1D theoretical limit of the power semiconductor devices. However, the Floating Island is confronted with severe turn-on recovery problem due to residue charges in oppositely doped regions after blocking state. In this paper, a novel N+ Buffer is conceived as a solution to the turn-on recovery problem. The SiC Floating Island Schottky Barrier Diode with N+ Buffer (NB-FISBD) is experimentally fabricated and tested. It shows high static performance and effectively suppressed turn-on recovery problem. The NB-FISBD is expected to help the Floating Island devices unleash their potential in power electronic systems.