A Physics-Oriented Analysis of SiC Trench MOSFETs Under Gate Switching Stress Test Conditions

This work presents a physics-oriented investigation on SiC MOSFET dynamic stress in the recently required Gate Switching Stress (GSS) test. Differently from precedent works, TCAD physics-based simulations are calibrated with real measurements in 1200V SiC Trench MOSFETs by a dedicated GSS test setup. The calibrated models are used to dynamically inspect the physical magnitudes during GSS turn-on under different test conditions and to better understand the GSS stressors for the subsequent Gate Switching Instability (GSI).