Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

This study presents the experimental validation of the integrated circuits based on DIE-mode tri-gate GaN MIS-HEMTs. The threshold voltage of the devices can be modulated from -9.1 V to +1.1 V by varying the fin width from 800 nm to 56 nm on a single chip. The E-mode device exhibits a slight threshold voltage shift
$(\Delta \mathrm{V}_{\text{th}})$
of -0.11 V from room temperature up to
$15 0^{\circ}\mathrm{C}$
. At fin width of 56 nm, an E-mode device shows a low on-resistance
$(\mathrm{R}_{\text{on}})$
of
$8.2 \Omega.\text{mm}$
, an on/off current ratio exceeding 10
⁹
, and a breakdown voltage (VBR) of 1439 V. Furthermore, the monolithically integrated inverter has stable dynamic characteristics at 1 MHz. The inverter shows a logic low noise margin
$(\mathrm{N}_{\text{ML}})$
of 2.04 V at a supply voltage of 10 V and a logic high noise margin
$(\mathrm{N}_{\text{MH}})$
of 6.83 V. The threshold voltage of the inverter
$(\mathrm{V}_{\text{th,inv}})$
exhibits a variation of 0.09 V up to
$15 0^{\circ}\mathrm{C}$
. These results validate the viability of monolithic integration of tri-gate GaN, thereby offering a significant opportunity to develop high-frequency and compact power conversion systems.