Evaluation of Trap Parameters of RC-IGBT After Repetitive Avalanche Stress by DLTS Simulation

This study examines traps responsible for deterioration in power semiconductors following exposure to avalanche stress. By utilizing deep-level transient spectroscopy (DLTS) analysis and TCAD simulation, we aim to explore the effects of repetitive avalanche stress (equivalent to 1/10 of the destructive level) on the reverse conducting IGBT (RC-IGBT) devices. Peaks corresponding to donor and acceptor-type carrier traps are observed in the DLTS signal, indicating changes in carrier density, feedback capacitance, and turn-off characteristics. This approach allows for the evaluation of traps, assessment of their distribution, and simulation of the degradation of electrical characteristics caused by avalanche stress.