Single-Event Effects in SiC Power MOSFET Induced by Pulsed-Laser Two Photon Absorption

Single-event effect (SEE) especially single-event burnout (SEB) threshold voltage is investigated in SiC MOSFETs in both experiment and simulation. Pulsed-laser two photon absorption (TPA) technique is used in experiments with three depths of focus (DOF) (Of.lm, 3f.lm, 6f.lm) and three energies (E) (20nJ, 35nJ, 50nJ). Experimental data for 1.2kV MOSFET shows that the SEB threshold voltage is 450V at
$DOF=3\mu \mathrm{m}$
, which is lowest among all three depths of focus. SEB threshold voltage is proved to have a positive correlation with device voltage rating and a negative correlation with laser energy. Devices with three voltage ratings (1.2kV, 1.7kV, 3.3kV) are studied and two different single-event effects were observed with increasing drain-source voltage at
$DOF=3\mu\mathrm{m}$
and
$E$
=50nJ. TCAD simulation demonstrates that high electrical field and high avalanche current localized near SiC N-/N+ interface lead to extreme local power dissipation and rapid lattice temperature rising (> 1500K), and cause the SEB in SiC MOSFETs.