High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer

This work demonstrates a high V
TH
(+8.4 V) and breakdown voltage (1100 V) Enhancement-mode GaN HEMTs using an
$\text{Al:HfO}_{\mathrm{x}}$
-based charge trapping layer (CTL). The operation mechanism is investigated through TCAD simulation, and the device performance is systematically evaluated through static and dynamic electrical measurements. Thanks to the V
TH
is tunable by initialization voltage, we prove that the fabricated CTL-based GaN inverters can operate under a variety of conditions (
$\beta=10-40$
and
$\mathrm{V}_{\text{DD}}=3$
V-15 V) with commendable output swing and noise margins. These results present a promising approach towards to realizing the monolithic integration of GaN devices for power ICs applications.