Investigation on the Influences of Affinity Variations of p-NiOx in Ga203 Fin-HJFETs at High Temperatures

In this work., the influences of affinity variations of
$\text{p-NiO}_{\mathrm{x}}$
in fin-based
$\text{p-NiO}_{\mathrm{x}}/\mathrm{n}-\text{Ga}_{2}\mathrm{O}_{3}$
heterojunction field-effect transistors (Fin-HJFETs) at high temperatures are investigated in details. An temperature dependent affinity model of
$\text{p-NiO}_{\mathrm{x}}$
is built by the mean of
$\mathrm{C}++\text{coding}$
the temperature related partial derivative is 1 me V /K. Furthermore, a gate voltage model incorporating this affinity model is developed to investigate the reliability at high temperatures. Finally, it is revealed that the increase of
$\text{p-NiO}_{\mathrm{x}}$
affinity at high temperature almost not affect the transfer characteristics, but leads to the increase of gate leakage currents, resulting in reliability problems such as gate failure during short-circuit events.