Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap

Based on the increasing requirements for automotive power devices used in linear mode, which require both wider Safe Operating Area (SOA) performance and lower
$R_{ds-on}$
, SGT (RARS-SGT) with the Regional Allocate Resistance of Source is firstly developed in this paper. The performance of SOA is increased by 48% with the
$\boldsymbol{\max I_{d}}$
raising to
$20\mathbf{A}$
, while it is 13.5 A for Conventional SGT (C-SGT) in condition of
$V_{d}=V_{\mathrm{g}}$
= 10 V and
$\boldsymbol{PT=10}$
ms. In addition, it solves the problem that
$R_{ds-on}$
is inevitably increasing in Channel Dummy SGT (CD-SGT) proposed by us earlier. The test and simulation results show that RARS-SGT has lower ZTC and weaker positive current-temperature feedback, because it sets up the self-ballast negative feedback mechanism to increase the source potential
$V_{s}$
and further also suppress the trigger of parasitic NPN.