Circuit Simulation Model with Design Parameters for SiC-MOSFET

We propose a physics-based model incorporating the interaction between MOSFET and JFET in SiC, which allows for the explicit setting of design parameters. Developed in this research, the model aims at estimating worst- case scenarios and accounting for significant variations. This model is applied to a commercial SiC MOSFET as demonstration. The results align closely with measured waveforms under various conditions. The results indicates this model is expected to be used even for short-circuit calculations.