Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices

Silicon carbide (SiC) based power devices are highly competitive and widely used, especially in the electric vehicle (EV) market. Beyond the “conventional” 650–1700 V blocking voltage space for EV applications, high-voltage
$( > 3$
kV), high-current
$(> 100\ \mathrm{A})$
devices have raised commercial interest for traction and PV applications. The fundamental advantages of the Superjunction (SJ) concept are of particular interest to help reduce the drift region resistance. The proposed 3.3 kV semi-SJ Schottky diode reduces the
$\mathrm{R}_{\text{ON, SP}}$
by 9.7 %, compared to a planar diode solution. Additionally, with the introduction of a novel etched termination (ET) combined with junction termination extension (JTE) and floating field rings (FFR) blocking is improved by 6 %.