3D Co-packaging of GaN/SiC Cascode Device for High-Frequency Power Switching Operation

To unlock the full potential of GaN/SiC cascode device in fast switching capability, the parasitic inductances of interconnections should be reduced. In this work, enabled by the planar nature of the GaN HEMT, a compact 3D co-packaging solution with greatly reduced interconnection inductances is proposed. Compared with the latest commercially available SiC MOSFETs and the Si/SiC cascode devices, the GaN/SiC cascode device in the 3D co-packaged configuration delivers the fastest switching process with lowest switching loss, making it highly preferred for high-frequency power switching applications.