2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 mA/cm2 Based upon RESURF Effect

In this paper, we present vertical
$\beta-\text{Ga}2\mathrm{O}_{3}$
heterojunction barrier Schottky diodes (HJBSDs) with variable width (W) of
$\mathrm{p}+$
region to optimize the forward and reverse characteristics of devices. The bipolar operation mode of HJBSDs leads to a decreasing specific on-resistance
$(R_{\mathrm{o}\mathrm{n},\mathrm{s}\mathrm{p}})$
as
$W$
increases. The reverse leakage current in all HJBSDs is significantly suppressed thanks to the reduced surface field (RESURF) effect arising from junction barrier Schottky structure. Furthermore, a floating field rings structure is employed to reduce the electric field at the edge of anode and achieve a high breakdown voltage. A highest breakdown voltage of 2.74 kV with a low leakage current of less than 1
$\text{mA}/\text{cm}^{2}$
and a low
$R_{\mathrm{o}\mathrm{n},\mathrm{s}\mathrm{p}}$
of 7.5
$\mathrm{m}\Omega\cdot \text{cm}^{2}$
were achieved in HJBSD with
$W$
of 15μm, yielding a superior power figure-of-merit of 1.
$0\text{GW}/\text{cm}^{2}$
. This work provides valuable insights into reducing off-state losses for
$\beta-\text{Ga}_2\mathrm{O}_{3}$
power devices.