A 200V High-Speed Level Shifter for Monolithic GaN IC with Enhanced $\mathrm{d}V_\mathrm{S}/\text{dt}$ Noise Immunity and Negative $V_\mathrm{S}$ Tolerance

The monolithic GaN half-bridge power IC minimizes parasitics and fully unleashes the high-speed capabilities of GaN devices. However, due to the unique characteristics of GaN devices and processes, reliability issues faced by level shifters in GaN half-bridge ICs are more severe. This study presents a GaN-based 200V high-speed level shifter with enhanced
$\mathrm{d}V\mathrm{s}/\mathrm{d}t$
noise immunity and negative
$V_\mathrm{S}$
tolerance. The new structure, composed of common-gate differential pairs, achieves a better trade-off between
$\mathrm{d}V\mathrm{s}/\mathrm{d}t$
noise immunity capability and propagation delay. Additionally, the negative
$V_{\mathrm{S}}$
tolerance of the level shifter has been strengthened by a concise circuit to accommodate the high reverse conduction voltage drop of GaN devices. Measured results verify the characteristics of the proposed circuit, which was fabricated using a 1μm GaN-on-Silicon process.