1.2 kV-Class Double Gate CSTBT™ with Carrier Profile Control for Total Switching Loss Reduction of Turn-Off and Tum-On

The 1.2 kV-class double gate carrier stored trench-gate bipolar transistor (DG CSTBT™) with carrier profile control is demonstrated to achieve a total reduction in switching losses of both turn-off and turn-on. To examine the effect of carrier profiles on DG CSTBT™., devices with the identical
$V_{\mathrm{C}\mathrm{E}(\mathrm{s}\mathrm{a}\mathrm{t})}$
value but varying carrier profiles were fabricated by adjusting the doping concentrations of the p- collector and carrier stored layer. To comprehensively investigate the impact of DG driving on the switching characteristics., the trade-off relationships between switching losses and dV/dt are evaluated. Under a specific value of dV/dt., DG CSTBT™ with a low-doped p-collector and a high-doped CSL resulted in a 26% reduction in the total switching losses of turn-off and turn-on. Additionally, SCSOA and RBSOA were successfully maintained for DG CSTBT™ with carrier profile control.