3D Simulation Study of a Novel 1200 V IGBT Concept for EMI-Critical Applications

We present a novel 1200-V IGBT concept especially designed for switching with low electromagnetic interference (EMI) noise, as e.g. required for drives applications. These can suffer from EMI problems arising from diode snap-off oscillations at very low currents. A conventional solution would be to limit the dI/dt and dV/dt of the IGBT to exhibit less switching stress on the diode, which usually increases losses of the inverter at nominal conditions. The novel structure shows unique properties which lower switching and on-state losses at nominal conditions, while successfully reducing the switching slopes at very low currents resulting in improved performance.