Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform

A novel 16V Lateral Double-diffused MOSFET (LDMOS) based on a standard 0.18
$\mu\mathrm{m}$
BCD platform is reported in this work, which uses grid-gate technology to realize the 35V off-state breakdown voltage
$(\text{BV}_{\mathrm{O}\mathrm{F}\mathrm{F}})$
with a reduction in the specific on-resistance
$(\mathrm{R}_{\mathrm{o}\mathrm{n},\mathrm{s}\mathrm{p}})$
from
$6.8\mathrm{m}\Omega\cdot \text{mm}^{2}$
to
$5.9\mathrm{m}\Omega\cdot \text{mm}^{2}$
. By utilizing the single buffer structure and buffer RESURF composite structure, the proposed grid-gate 16V-nLDMOS is optimized to meet the requirements of 28V
$\text{BV}_{\mathrm{O}\mathrm{F}\mathrm{F}}$
and the measured
$\mathrm{R}_{\mathrm{o}\mathrm{n},\text{sp}}$
is reduced to
$4.7\mathrm{m}\Omega\cdot \text{mm}^{2}$
. What's more, TLP experiments on the samples illustrated that the proposed buffer structures can extend the safe operation area (SOA) of grid-gate LDMOS to satisfy the need for DC-DC application.