On the Superior Reverse Recovery Properties of Silicon Partial SOI SJ Diode

This study presents an electrical characterization evaluation of a partial Silicon-On-Insulator (PSOI) Superjunction (SJ) Lateral Diffused n-type MOSFET (LDNMOS) and Lateral SJ Diode, integrated into a 0.18μm technology platform. Despite the added process complexity compared with SOI reduced surface field (RESURF), this technology offers a wider range of voltage ratings due to the action of the depletion layer in the handle wafer (HW), reduced parasitic capacitances due to the extra volume of the depletion region in the HW and better heat conduction due to thinner buried oxide layer. The scalable high voltage SJ lateral diffused MOSFETs (LDMOS) cover a range of rated voltages from 45V to 375V, and the developed PSOI SJ Diodes exhibit an impressive reverse recovery behavior, rivaling the switching losses of SiC Schottky diodes.