Influence of Device Length on Analog Performances of a Normally-Off Underlapped AlGaN/GaN-based Double Gate MOS-HEMT Device

This paper undertakes a thorough exploration and analysis of the analog performance of a novel Normally off AlGaN/GaN Underlapped Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) Dual Gate (U-DG) device. The core aim of this research is to discern how alterations in the device length influence the overall performance of the device. Several critical parameters, including Conduction Band Energy (CBE), I
d
/V
gs
curve, I
d
/V
ds
curve, transconductance, and Transconductance Generation Factor (TGF), underwent meticulous scrutiny. The observation presented an increase of 94.24% in drain current on variation of the device length, which is important especially in the pursuit of enhanced efficiency in low-power scenarios.